The MIT Microsystems Technology Laboratories may have developed a potential replacement to silicon transistors-- a transistor just 22nm in length made out of indium gallium arsenide (InGaAS).
The material, a compound semiconductor made out indium, gallium and arsenic, already has use in high-power and high-frequency electronics as well as a detector material in optical fibre communications.
What makes the MIT development significant is size-- at 22nm (the size of 9 strands of human DNA), the InGaAS transistor points towards a future of more densely Read more...