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Storage and Storage Software

Storage Bay Options with CRU

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Storage Bay Options with CRU

CRU-DataPort reveals its RAX removable 2-bay enclosures for 1U rackmount storage systems. 

The enclosures handle RAID or JBOD, with either bare drive access or protective fully enclosed removable drive carriers. 

There's also the option for hardware-based 128-bit encryption available. 

CRU-DataPort incorporates TrayFree bays and industry standards removable drive carriers into the rackmount chassis-- ideal for disk-to-disk backup, off-site disaster recovery, backup/archive workflow and data ingestion. 

Interface options available include firewire 8 Read more...

DuraDrive SSDs with SATA II

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DuraDrive SSDs with SATA II

SuperTalent announces a SATA version of its DuraDrive SSD series, the AT2. 

The company says DuraDrive SSDs are designed for use in environments "too harsh" for standard drives. The AT2 follows SuperTalent's ZIF and PATA-interface drives. 

The DuraDrive series ECC/EDC support, bad bit management firmware and patented wear leveling technology. It also has optional Secure Erase featrure support (required in many military and industrial applications). 

With an advanced industrial controller and premium NAND flash, SuperTalent says the drives work in Read more...

Toshiba's Enterprise Steps to SSD

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Toshiba's Enterprise Steps to SSD

Toshiba extends its enterprise storage range with its NAND Flash MKx001GRZB series. 

The SSD series has a small form factor (2.5") and uses 32nm enterprise-grade single-level cell (eSLC) technology with a 6Gb/sec SAS interface. 

The range will be available in 100GB, 200GB and 400GB capacities.

Toshiba says the drives outperform the competing enterprise-class SSDs with random sustained 90000 read and 17000 write IOPS and sequential sustained 510MB/sec read and 230MB/sec write throughput. 

Power requirements are 6.5 Watts at operation (efficiency rating Read more...

3D Memory Stacking From Samsung

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3D Memory Stacking From Samsung

Samsung stacks memory chips on top of each other in its new 8GB DIMM and increases memory density by 50% (compared to conventional DIMM technology)

The new registered or buffered (RDIMM) product is based on Samsung's own Green DDR3 DRAM and 40nm circuitry.

The industry refers to the process as through silicon via (TSV). It creates vertical micron-sized holes through the chip silicon (instead of just horizontal) to create a denser architecture.

Samsung says the technology saves up to 40% of power consumption, and will apply it to memory with Read more...

Micron Goes After NAND Memory Errors

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Micron Goes After NAND Memory Errors

Micron integrates error management techniques with its NAND products with ClearNAND.

As semiconductor circuity shrinks, data error rates increase, calling for more sophisticated error correction code (ECC). 

ClearNAND eliminates the ECC burden from the host processor through an application-specific integrated circuit (ASIC) and an 8 byte capacity NAND die acting a data collection cache. 

The ClearNAND itself appears as a standard NAND interface to the host processor. 

Micron uses its 25nm MLC process in its manufacture.

Products are available in 2 versions-- Read more...

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