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Storage and Storage Software

Samsung Produces 256-Gb 3D V-NAND

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Samsung Produces 256-Gb 3D V-NAND

Samsung starts mass production of 3rd generation 256-gigabit (Gb) 3D Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for SSD use.

The announcement takes place just a week after the revelation of 256Gb 48-layer BiCS 3D NAND flash from Toshiba and Samsung.

In any case, cording to Samsung 256Gb 3rd generation 3D V-NAND doubles the density of conventional 128Gb NAND flash chips by enabling up to 32GB of memory storage on a single die, making it ideal for use in multi-terabyte SSDs.

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SanDisk, Toshiba Unveil 256Gb BiCS Flash

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SanDisk, Toshiba Unveil 256Gb BiCS Flash

SanDisk and Toshiba announce the next generation of BiCS (Bit Cost Scaling) flash memory-- what the two companies claim is the first 256 gigabit (32GB) 48-layer BiCS 3D NAND flash using 3-bit-per-cell TLC (triple-level cell) technology.

BiCS flash uses a 48-layer stacking process to surpass the storage capacity of current 2D NAND flash while enhancing write/erase reliability, endurance and write speeds. Back in March Toshiba revealed an earlier version of the technology with 128 gigabit (16GB) 48-layer BiCS non-volatile memory chips.

The companies add the 256Gb device is suitable for diverse applications, including consumer SSDs, mobile devices, memory cards and enterprise data centre SSDs.

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Intel, Micron Claim New Memory Category

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Intel, Micron Claim New Memory Category

Intel and Micron create a new memory category, the first since the 1989 introduction of NAND flash-- 3D XPoint, a kind of memory the companies say is up to 1000x faster than NAND and 10x denser than conventional memory.

The result of over a decade of R&D, 3D XPoint memory features a transistor-less cross point architecture built in a "3D checkerboard." Memory cells sit at the intersection of word lines and bit lines, allowing the individual addressing of cells. The result is data written and read in small sizes, leading to faster and more efficient read/write processes.

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D-Link Intros ShareCenter+

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D-Link Intros ShareCenter+

D-Link launches the ShareCenter+ 4-Bay Cloud Network Storage Enclosure (DNS-340L), a self-contained storage solution for SMB customers and prosumers wanting high performance from a self-contained device.

The DNS-340L features 4 hot-swappable drive bays with built-in iSCSI target support and 7 RAID configurations (JBOD, RAID 0, 1, 5. 10, 1+0). It supports 3.5-inch SATA HDDs up to 6TB in sizes, and is powered by a 1.2GHz CPU and 512MB RAM.

Connectivity comes through x2 ethernet ports, x1 USB 3.0 port and x2 USB 2.0 ports.

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HGST Intros 10TB Ultrastar Archive

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HGST Intros 10TB Ultrastar Archive

HGST launches what it claims is the first enterprise-class 10TB HDD designed for next-generation active archive applications-- the host-managed Ultrastar Archive Ha10 SMR HDD.

The drive combines a pair of technologies, namely the 2nd generation HelioSeal helium-filled HDD platform and shingled magnetic recording (SMR), a core technology involving the overlapping (or "shingling") of data tracks on top of each other for higher areal density within the same physical footprint.

HGST adds the Ha10 is rated at 2 million hours mean time between failure (MTBF) and features a 10-15 unrecoverable reduced bit error rate, rotation vibration safeguards, 600K load/unload cycles and a 5-year limited warranty.

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